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  Datasheet File OCR Text:
 BC807-16W BC807-25W BC807-40W
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
1 BASE
COLLECTOR 3
3
1
2
2 EMITTER
SOT-323(SC-70)
MaximumRatings (TA=25Cunless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation FR-5 Board(1) TA=25C Thermal Resistance, Junctionto Ambient(1) Junction Temperature Range Storage Temperature Range
VCEO VCBO VEBO IC PD RJA TJ Tstg
-45 -50 -5.0 500 150 833 -55 to +150 -55 to +150
V V V
mA
mW C/W C C
Device Marking
BC807-16W = 5A , BC807-25W = 5B , BC807-40W = 5C
1. FR-5 = 1.0 x 0.75 x 0.062 in.
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BC807-16W BC807-25W BC807-40W
WEITRON
Symbol Min Typ Max Unit
Electrical Characteristics(TA=25C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage IC=-10mA Collector-Base Breakdown Voltage IC=-10A Emitter-Base Breakdown Voltage IE=-1.0A VCB=-20V VCE =-20V VEB =-5V V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO ICBO -45 -50 -5.0 -0.1 -0.2 -0.1 V V V A A A
On Characteristics
DC Current Gain IC=-100mA, VCE=-1.0V BC807-16W BC807-25W BC807-40W 100 160 250 40 VCE(sat) VBE(on) 250 400 600 -0.7 -1.2 V V
hFE
-
IC=-500mA,VCE=-1.0V) Collector-Emitter Saturation Voltage IC=-500mA, IB=-50mA Base-Emitter On Voltage IC=-500mA, VCE=-1.0V
Small-signal Characteristics
Current-Gain-Band width Product IC=-10mA, VCE=-5.0V, f=100MHz Output Capacitance VCB=-10V,f=1.0MHz fT Cob 80 10 MHz pF
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BC807-16W BC807-25W BC807-40W
WEITRON
SOT-323 Outline Demensions
Unit:mm
A
TOP VIEW D E G H
B
C
K L
J
M
Dim A B C D E G H J K L M
SOT-323
Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10
Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25
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